DocumentCode
951548
Title
A low-power ROM using single charge-sharing capacitor and hierarchical bit line
Author
Yang, Byung-Do ; Kim, Lee-Sup
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Chungbuk, South Korea
Volume
14
Issue
4
fYear
2006
fDate
4/1/2006 12:00:00 AM
Firstpage
313
Lastpage
322
Abstract
This paper describes a low-power read-only memory (ROM) using a single charge-sharing capacitor (SCSC) and hierarchical bit line (HBL). The SCSC-ROM reduces the power consumption in bit lines. It lowers the swing voltage of bit lines to a minimal voltage by using a charge-sharing technique with a single capacitor. It implements the capacitor with dummy bit lines to improve noise immunity and to make it easier to design. Furthermore, the HBL saves power by reducing the capacitance and leakage current in bit lines. The SCSC-ROM also reduces the power consumption in control unit and predecoder by using the hierarchical word line decoder. The simulation result shows that the SCSC-ROM with 4 K/spl times/32 bits consumes only 37% power of a conventional ROM. An SCSC-ROM chip is fabricated in a 0.25-/spl mu/m CMOS process. It consumes 8.2 mW at 240 MHz with 2.5 V.
Keywords
CMOS memory circuits; capacitors; low-power electronics; read-only storage; 0.25 micron; 128 kbit; 2.5 V; 240 MHz; 8.2 mW; CMOS process; hierarchical bit line; hierarchical word line decoder; low-power ROM; low-power read-only memory; noise immunity; single charge-sharing capacitor; CMOS process; Capacitance; Capacitors; Decoding; Energy consumption; Leakage current; Read only memory; SRAM chips; Very large scale integration; Voltage; Bit line; ROM; charge-sharing; low power; word line decoder;
fLanguage
English
Journal_Title
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher
ieee
ISSN
1063-8210
Type
jour
DOI
10.1109/TVLSI.2006.874303
Filename
1637462
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