Title :
Two-stage amplifier utilising GaAs active-medium-propagation devices
Author :
Fleming, P.L. ; Carlson, H.E.
Author_Institution :
COMSAT Laboratories, Device Physics Department, Clarksburg, USA
Abstract :
This letter describes a practical 2-stage amplifier utilising active-medium-propagation (a.m.p.) devices. The unit is centred at 14.7 GHz with a 500 MHz bandwidth and 15 dB external gain. Comparable f.e.t. devices require ¿ 0.5 ¿m gate dimensions whereas the GaAs a.m.p. is fabricated with a 5.0 ¿m gap.
Keywords :
microwave integrated circuits; microwave parametric amplifiers; solid-state microwave circuits; 14.7 GHz centre frequency; 15 dB external gain; 5 micron gap fabrication; 500 MHz bandwidth; AMP amplifiers; GaAs active medium propagation devices; microwave parametric amplifiers; two stage amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790292
