Title :
Scanning-electron-beam annealing of ion-implanted p-n junction diodes
Author :
McMahon, Richard A. ; Ahmed, Hameeza ; Speight, J.D. ; Dobson, R.M.
Author_Institution :
Cambridge University, Engineering Department, Cambridge, UK
Abstract :
Scanning-electron-beam annealing of ion-implanted silicon p+-n junctions over a range of beam power and exposure conditions is described. Electrical measurements have shown that electron-beam annealing can produce diode characteristics close to those of similar thermally annealed structures.
Keywords :
annealing; boron; electron beam effects; elemental semiconductors; semiconductor diodes; silicon; B; Si; annealing; beam power; current voltage characteristics; diode characteristics; electrical measurements; exposure conditions; ion implantation; p-n junction diodes; planar diodes; scanning electron beam;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790311
