• DocumentCode
    951769
  • Title

    New stripe-geometry laser with simplified fabrication process

  • Author

    Amann, M.-C.

  • Author_Institution
    Technische Universitÿt Mÿnchen, Lehrstuhl fÿr Allgemeine Elektrotechnik und Angewandte Elektronik, Mÿnchen, West Germany
  • Volume
    15
  • Issue
    14
  • fYear
    1979
  • Firstpage
    441
  • Lastpage
    442
  • Abstract
    A new type of GaAs-GaAlAs stripe-geometry laser with an appreciably simplified fabrication process is described. Owing to the excellent lateral current confinement of this structure, low threshold current densities are achieved even for very narrow stripe widths. In addition, the built-in passive wave-guiding stabilises the fundamental horizontal transverse mode, thereby avoiding nonlinearities in the light output against current characteristic. For 3¿m wide and 175 ¿m long lasers, threshold currents of 30¿35 mA are achieved and stable transverse and longitudinal monomode emission has been observed up to more than 5 mW light power output.
  • Keywords
    III-V semiconductors; gallium arsenide; semiconductor junction lasers; GaAs-GaAlAs; III-V semiconductors; current characteristic; fabrication process; fundamental horizontal transverse mode; lateral current confinement; light output; linear; longitudinal monomode emission; low threshold current densities; narrow stripe widths; passive waveguiding; stripe geometry laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790316
  • Filename
    4243428