Title :
New stripe-geometry laser with simplified fabrication process
Author_Institution :
Technische Universitÿt Mÿnchen, Lehrstuhl fÿr Allgemeine Elektrotechnik und Angewandte Elektronik, Mÿnchen, West Germany
Abstract :
A new type of GaAs-GaAlAs stripe-geometry laser with an appreciably simplified fabrication process is described. Owing to the excellent lateral current confinement of this structure, low threshold current densities are achieved even for very narrow stripe widths. In addition, the built-in passive wave-guiding stabilises the fundamental horizontal transverse mode, thereby avoiding nonlinearities in the light output against current characteristic. For 3¿m wide and 175 ¿m long lasers, threshold currents of 30¿35 mA are achieved and stable transverse and longitudinal monomode emission has been observed up to more than 5 mW light power output.
Keywords :
III-V semiconductors; gallium arsenide; semiconductor junction lasers; GaAs-GaAlAs; III-V semiconductors; current characteristic; fabrication process; fundamental horizontal transverse mode; lateral current confinement; light output; linear; longitudinal monomode emission; low threshold current densities; narrow stripe widths; passive waveguiding; stripe geometry laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790316