Title :
W-band waveguide-packaged InP HEMT reflection grid amplifier
Author :
Chung, Younkyu ; Cheung, Chun-Tung ; DeLisio, Michael P. ; Rutledge, David B.
Author_Institution :
California Inst. of Technol., Pasadena, CA, USA
fDate :
6/1/2006 12:00:00 AM
Abstract :
This letter presents a 79-GHz broadband reflection-type grid amplifier using spatial power combining to combine the power of 64 unit cells. Each unit cell uses a two-stage cascade configuration with InP HEMTs arranged as a differential pair. A broadband orthogonal mode transducer (OMT) separates two orthogonally polarized input and output signals over a 75 to 85GHz range. In conjunction with the OMT, a mode converter with quadruple-ridged apertures was designed to enhance the field uniformity over the active grid. Measurements show 5-dB small signal gain at 79GHz and an 800-MHz 3-dB bandwidth. The amplifier generates an output power of 264mW with little evidence of saturation.
Keywords :
HEMT circuits; III-V semiconductors; cascade networks; indium compounds; millimetre wave amplifiers; waveguide components; wideband amplifiers; 264 mW; 3 dB; 5 dB; 75 to 85 GHz; 800 MHz; InP; W-band waveguide packaged amplifier; broadband orthogonal mode transducer; broadband reflection grid amplifier; mode converter; packaged HEMT; quadruple-ridged apertures; spatial power combining; two-stage cascade configuration; Apertures; Broadband amplifiers; Gain measurement; HEMTs; Indium phosphide; Polarization; Power amplifiers; Power generation; Reflection; Transducers; Grid amplifier; mode converter; orthogonal mode transducer (OMT); spatial power combining;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2006.875629
