Title :
A miniature Q-band low noise amplifier using 0.13-μm CMOS technology
Author :
Jeng-Han Tsai ; Wei-Chien Chen ; To-Po Wang ; Tian-Wei Huang ; Huei Wang
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
6/1/2006 12:00:00 AM
Abstract :
A miniature Q-band low noise amplifier (LNA) using 0.13-μm standard mixed signal/radio frequency complementary metal-oxide-semiconductor (CMOS) technology is presented in this letter. This three-stage common source thin-film microstrip LNA achieves a peak gain of 20dB at 43GHz with a compact chip size of 0.525mm2. The 3-dB frequency bandwidth ranges from 34 to 44GHz and the minimum noise figure is 6.3dB at 41GHz. The LNA outperforms all the reported commercial standard CMOS Q-band LNAs, with the highest gain, highest output IP3, and smallest chip size.
Keywords :
CMOS integrated circuits; field effect MIMIC; low noise amplifiers; millimetre wave amplifiers; 0.13 micron; 20 dB; 3 dB; 34 to 44 GHz; gain; miniature Q-band LNA; radiofrequency CMOS technology; standard mixed signal; thin-film microstrip; three-stage common source thin-film microstrip LNA; CMOS process; CMOS technology; Coplanar waveguides; Frequency; Gain; Low-noise amplifiers; Microstrip; Millimeter wave technology; Noise figure; Transistors; Complementary metal-oxide-semiconductor (CMOS); low noise amplifier (LNA); millimeter-wave (MMW); thin-film microstrip (TFMS);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2006.875628
