Title :
Effect of Si3N4 encapsulation on the laser-annealing behaviour of GaAs
Author :
Badawi, M.H. ; Akintunde, J.A. ; Sealy, B.J. ; Stephens, K.G.
Author_Institution :
University of Surrey, Department of Electronic and Electrical Engineering, Guildford, UK
Abstract :
When semi-insulating GaAs samples are coated with pyrolytically deposited Si3N4 layers and subsequently irradiated with a Q-switched ruby laser with energy densities > 0.3 J/cm2, it is found that a thin layer (0.1¿0.25 ¿m) of the underlying GaAs substrates becomes n-type. This phenomenon may be the reason why, in previous work on laser annealing of donor implanted GaAs samples, the percentage electrical activity increased when samples were coated with Si3N4.
Keywords :
III-V semiconductors; annealing; encapsulation; gallium arsenide; laser beam applications; semiconductor doping; GaAs substrate surface becomes n-type; Q-switched ruby laser; Si3N4 encapsulating effect; electrical activity increase; energy densities >0.3 J/cm2; laser annealing behaviour of GaAs; pyrolytically deposited Si3N4 layers; semiinsulating GaAs samples;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790321
