• DocumentCode
    951859
  • Title

    InP-lnGaAsP planar avalanche photodiodes with self-guard-ring effect

  • Author

    Taguchi, Katsuhisa ; Matsumoto, Yuki ; Nishida, Keisuke

  • Author_Institution
    Nippon Electric Co. Ltd., Central Research Laboratories, Kawasaki, Japan
  • Volume
    15
  • Issue
    15
  • fYear
    1979
  • Firstpage
    453
  • Lastpage
    455
  • Abstract
    Marked diode characteristics dependence on the distance between p-n junction and heterointerface in double heterojunction InP-InGaAsP planar a.p.d.s is described. In a diode with an optimised configuration, as high as 3000 maximum avalanche gain and less than 3×10¿6 A/cm2 dark-current density at 0.9 VB are achieved.
  • Keywords
    III-V semiconductors; avalanche photodiodes; indium compounds; InP-InGaAsP planar avalanche photodiodes; avalanche gain 3000; dark current density 3x10-6 A/cm2; diode characteristics; planar structure; self guard ring effect;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790326
  • Filename
    4243439
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=951859