Title :
Flip-chip mounted GaAs power f.e.t. with improved performance in X- to Ku-band
Author :
Mitsui, Yoshifuru ; Kobiki, M. ; Wataze, M. ; Otsubo, M. ; Ishii, Takuro ; Mitsui, S.
Author_Institution :
Mitsubishi Electric Corporation, Semiconductor Laboratory, Itami, Japan
Abstract :
A GaAs power m.e.s.f.e.t. with a new structure has been developed, which allows extremely reduced source inductances and minimised thermal resistance. In the structure, the chip, with metal posts plated on the source, drain and gate pads, is connected directly to the package with no wire. The best results obtained were 2.5 W at 15 GHz and 4.1 W at 12 GHz.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; flip-chip devices; gallium arsenide; power transistors; solid-state microwave devices; 2.5 W at 15 GHz; 4.1 W at 12 GHz; GaAs power MESFETs; Ku-band; X-band; flip chip devices; microwave FETs; minimised thermal resistance; reduced parasitic inductance; reduced source inductances;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790331
