DocumentCode
951914
Title
Flip-chip mounted GaAs power f.e.t. with improved performance in X- to Ku-band
Author
Mitsui, Yoshifuru ; Kobiki, M. ; Wataze, M. ; Otsubo, M. ; Ishii, Takuro ; Mitsui, S.
Author_Institution
Mitsubishi Electric Corporation, Semiconductor Laboratory, Itami, Japan
Volume
15
Issue
15
fYear
1979
Firstpage
461
Lastpage
462
Abstract
A GaAs power m.e.s.f.e.t. with a new structure has been developed, which allows extremely reduced source inductances and minimised thermal resistance. In the structure, the chip, with metal posts plated on the source, drain and gate pads, is connected directly to the package with no wire. The best results obtained were 2.5 W at 15 GHz and 4.1 W at 12 GHz.
Keywords
III-V semiconductors; Schottky gate field effect transistors; flip-chip devices; gallium arsenide; power transistors; solid-state microwave devices; 2.5 W at 15 GHz; 4.1 W at 12 GHz; GaAs power MESFETs; Ku-band; X-band; flip chip devices; microwave FETs; minimised thermal resistance; reduced parasitic inductance; reduced source inductances;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19790331
Filename
4243444
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