Title :
Temperature drift of modulation characteristics in semiconductor lasers
Author_Institution :
Radio Tech. Inst., Acad. of Sci., Moscow, Russia
fDate :
8/1/1993 12:00:00 AM
Abstract :
The temperature dependences of the basic parameters of single-mode InGaAsP semiconductor lasers have been analysed with due regard for the Auger effect. Formulas have been derived for computing the temperature drifts of amplitude-frequency and phase-frequency characteristics (AFC, PFC) under direct high-frequency modulation to construct three-dimensional amplitude and phase surfaces. On the basis of the formulas derived, an analytical method has been designed for calculating the temperature drift of the AFC and PFC of semiconductors lasers under high-frequency modulation by small signals without any optical feedback
Keywords :
Auger effect; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser theory; optical modulation; semiconductor lasers; 3D amplitude surfaces; Auger effect; InGaAsP; amplitude-frequency; direct high-frequency modulation; modulation characteristics; phase surfaces; phase-frequency characteristics; semiconductor lasers; single-mode; small signals; temperature dependences; temperature drifts;
Journal_Title :
Optoelectronics, IEE Proceedings J
