Title :
40 Gbit/s DPSK modulation using an InGaAlAs-InAlAs MQW n-i-n Mach-Zehnder modulator
Author :
Shibata, Yoshitaka ; Kikuchi, Naoya ; Tsuzuki, Ken ; Kobayashi, Wataru ; Yasaka, Hiroshi
Author_Institution :
NTT Photonics Labs., Nippon Telegraph & Telephone Corp., Atsugi
Abstract :
Phase modulation characteristics are investigated using an InGaAlAs-InAlAs MQW n-i-n Mach-Zehnder modulator. A 40 Gbit/s DPSK modulation is successfully demonstrated at a driving voltage of only 3 Vpp in a push-pull configuration.
Keywords :
III-V semiconductors; aluminium compounds; differential phase shift keying; electro-optical modulation; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical fibre communication; semiconductor quantum wells; DPSK modulation; InGaAlAs-InAlAs; MQW n-i-n Mach-Zehnder modulator; bit rate 40 Gbit/s; phase modulation characteristics; push-pull configuration;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20082410
