Title :
Properties of Se-Ge inorganic photoresist as an ion-implantation mask
Author :
Yoshikawa, Akira ; Tamama, T. ; Mizushima, Y. ; Kudo, K. ; Shigematsu, Takuya
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
The usefulness of Se-Ge inorganic photoresists as ion-implantation masks is described. Experimentally determined values of the projected range and range straggling are in agreement with theory. The required masking thickness is shown to be about ¿ of that of organic photoresist. Other advantageous features are also pointed out.
Keywords :
ion implantation; masks; photoresists; IV-VI semiconductors; Se-Ge inorganic photoresist; ion implantation masks;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790360
