• DocumentCode
    952182
  • Title

    Properties of Se-Ge inorganic photoresist as an ion-implantation mask

  • Author

    Yoshikawa, Akira ; Tamama, T. ; Mizushima, Y. ; Kudo, K. ; Shigematsu, Takuya

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    15
  • Issue
    16
  • fYear
    1979
  • Firstpage
    499
  • Lastpage
    501
  • Abstract
    The usefulness of Se-Ge inorganic photoresists as ion-implantation masks is described. Experimentally determined values of the projected range and range straggling are in agreement with theory. The required masking thickness is shown to be about ¿ of that of organic photoresist. Other advantageous features are also pointed out.
  • Keywords
    ion implantation; masks; photoresists; IV-VI semiconductors; Se-Ge inorganic photoresist; ion implantation masks;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790360
  • Filename
    4243476
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=952182