Title :
Electron traps in n-InP grown by the synthesis solute-diffusion method
Author :
Tsubaki, Kotaro ; Kubota, Eishi ; Sugiyama, Koichi
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
Deep electron trap levels in n-InP single crystals grown by the synthesis solute-diffusion (s.s.d.) method have been studied by d.l.t.s. and admittance-spectroscopy techniques. Three deep trap levels were found and the dominant trap level was shown to have a depth of 0.26 eV and capture cross-section of 0.9 ¿ 1.2 × 10¿12cm2.
Keywords :
III-V semiconductors; deep levels; electron traps; indium compounds; III-V semiconductors; admittance spectroscopy; deep electron trap levels; deep level transient spectroscopy; grown by synthesis solute diffusion; n-InP single crystals grown;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790371
