Title :
Modelling the m.e.s.f.e.t. output nonlinearity
Author_Institution :
University of Melbourne, Department of Electrical Engineering, Parkville, Australia
Abstract :
Conditions governing the modelling of transductance and drain-conductance nonlinearities from measured data are investigated. A simple representation for regions close to pinch-off, corresponding to mixer operation, is obtained. Results of the modelling are compared to measurements on a typical 1 ¿m gate length m.e.s.f.e.t.
Keywords :
Schottky gate field effect transistors; semiconductor device models; MESFET; drain conductance nonlinearity; large signal equivalent circuits; mixer operation conditions; output nonlinearity; regions close to pinch-off; semiconductor device models; transconductance nonlinearity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790372
