• DocumentCode
    952358
  • Title

    Measurement arrangement for direct capacitance/surface-potential recording on m.o.s. capacitor

  • Author

    Ligtenberg, H.C.G. ; Snijder, J.

  • Author_Institution
    Groningen State University, Department of Applied Physics, Groningen, Netherlands
  • Volume
    15
  • Issue
    17
  • fYear
    1979
  • Firstpage
    523
  • Lastpage
    524
  • Abstract
    Using the slow-ramp C/V method as a starting point, a measuring method is developed to measure directly the total m.o.s. capacitance as a function of the surface potential. The advantages of this method are a greater accuracy and an easy way to compensate for leakage currents.
  • Keywords
    capacitance measurement; metal-insulator-semiconductor structures; MOS capacitor; direct capacitance/surface potential recording; measurement arrangement; slow ramp C/V method;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790377
  • Filename
    4243498
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=952358