Title :
Measurement arrangement for direct capacitance/surface-potential recording on m.o.s. capacitor
Author :
Ligtenberg, H.C.G. ; Snijder, J.
Author_Institution :
Groningen State University, Department of Applied Physics, Groningen, Netherlands
Abstract :
Using the slow-ramp C/V method as a starting point, a measuring method is developed to measure directly the total m.o.s. capacitance as a function of the surface potential. The advantages of this method are a greater accuracy and an easy way to compensate for leakage currents.
Keywords :
capacitance measurement; metal-insulator-semiconductor structures; MOS capacitor; direct capacitance/surface potential recording; measurement arrangement; slow ramp C/V method;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790377
