DocumentCode :
952370
Title :
Dual-gate m.e.s.f.e.t. self-oscillating X-band mixers
Author :
Stahlmann, R. ; Tsironis, Christos ; Ponse, F. ; Beneking, H.
Author_Institution :
Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
Volume :
15
Issue :
17
fYear :
1979
Firstpage :
524
Lastpage :
526
Abstract :
GaAs dual-gate m.e.s.f.e.t.s have been successfully used as self-oscillating down-convertors in X-band. A single device replaces the preamplifier, mixer and local oscillator. The best conversion gain achieved by mixing from 10 GHz down to 1 GHz was 12 dB. The input (gate 1) to output (drain) port isolation amounted to 16 dB. Slug-tuner and `disc¿-resonator circuits were tested and showed comparable gain and noise performance. Best d.s.b. noise figures of 5.5 dB could be realised at an i.f. of 1 GHz with an associated conversion gain of 4 dB.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; mixers (circuits); solid-state microwave circuits; GaAs MESFET; X-band; down convertors; dual gate MESFET self oscillating mixers; microwave mixers;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19790378
Filename :
4243499
Link To Document :
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