DocumentCode :
9524
Title :
1.5-kV and 2.2-m 
-cm 
Vertical GaN Transistors on Bulk-GaN Substrates
Author :
Hui Nie ; Diduck, Quentin ; Alvarez, Brian ; Edwards, Andrew P. ; Kayes, Brendan M. ; Ming Zhang ; Gangfeng Ye ; Prunty, Thomas ; Bour, David ; Kizilyalli, Isik C.
Author_Institution :
Avogy Inc., San Jose, CA, USA
Volume :
35
Issue :
9
fYear :
2014
fDate :
Sept. 2014
Firstpage :
939
Lastpage :
941
Abstract :
In this letter, vertical GaN transistors fabricated on bulk GaN substrates are discussed. A threshold voltage of 0.5 V and saturation current >2.3 A are demonstrated. The measured devices show breakdown voltages of 1.5 kV and specific ON-resistance of 2.2 mΩ-cm2, which translates to a figure-of-merit of VBR2/RON ~1 × 109 V2 Ω-1 · cm-2.
Keywords :
III-V semiconductors; gallium compounds; power transistors; semiconductor device breakdown; wide band gap semiconductors; GaN; breakdown voltages; bulk-substrates; figure-of-merit; threshold voltage; vertical transistors; voltage 0.5 V; voltage 1.5 kV; Aluminum gallium nitride; Gallium nitride; Logic gates; Schottky diodes; Substrates; Transistors; Gallium nitride; power semiconductor devices; vertical transistors;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2014.2339197
Filename :
6870487
Link To Document :
