• DocumentCode
    9524
  • Title

    1.5-kV and 2.2-m (\\Omega ) -cm (^{2}) Vertical GaN Transistors on Bulk-GaN Substrates

  • Author

    Hui Nie ; Diduck, Quentin ; Alvarez, Brian ; Edwards, Andrew P. ; Kayes, Brendan M. ; Ming Zhang ; Gangfeng Ye ; Prunty, Thomas ; Bour, David ; Kizilyalli, Isik C.

  • Author_Institution
    Avogy Inc., San Jose, CA, USA
  • Volume
    35
  • Issue
    9
  • fYear
    2014
  • fDate
    Sept. 2014
  • Firstpage
    939
  • Lastpage
    941
  • Abstract
    In this letter, vertical GaN transistors fabricated on bulk GaN substrates are discussed. A threshold voltage of 0.5 V and saturation current >2.3 A are demonstrated. The measured devices show breakdown voltages of 1.5 kV and specific ON-resistance of 2.2 mΩ-cm2, which translates to a figure-of-merit of VBR2/RON ~1 × 109 V2 Ω-1 · cm-2.
  • Keywords
    III-V semiconductors; gallium compounds; power transistors; semiconductor device breakdown; wide band gap semiconductors; GaN; breakdown voltages; bulk-substrates; figure-of-merit; threshold voltage; vertical transistors; voltage 0.5 V; voltage 1.5 kV; Aluminum gallium nitride; Gallium nitride; Logic gates; Schottky diodes; Substrates; Transistors; Gallium nitride; power semiconductor devices; vertical transistors;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2014.2339197
  • Filename
    6870487
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=9524