DocumentCode :
952537
Title :
Optimum built-in barrier height utilizing an extended concept of impedance matching
Author :
Kajiyama, Kenji ; Mizushima, Yoshihiko
Author_Institution :
Electrical Communication Laboratories, Tokyo, Japan
Volume :
66
Issue :
5
fYear :
1978
fDate :
5/1/1978 12:00:00 AM
Firstpage :
598
Lastpage :
599
Abstract :
Schottky-barrier height optimization for high-frequency usage is analytically discussed with an extended concept of impedance matching. The optimum value of 0.3 eV is almost a universal constant under various operating conditions, and agrees well with the previous prediction obtained by large signal simulation and InxGa1-xAs experiments.
Keywords :
Bipolar transistors; Current measurement; Electrical resistance measurement; Equations; Feedback circuits; Feedback loop; Genetic expression; Impedance matching; Mirrors; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1978.10969
Filename :
1455238
Link To Document :
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