High-performance E-mode AlGaN/GaN HEMTs

Author

Palacios, T. ; Suh, C.-S. ; Chakraborty, A. ; Keller, S. ; DenBaars, S.P. ; Mishra, U.K.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

27

Issue

6

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

428

Lastpage

430

Abstract

Enhancement-mode AlGaN/GaN high electron-mobility transistors have been fabricated with a gate length of 160 nm. The use of gate recess combined with a fluorine-based surface treatment under the gate produced devices with a threshold voltage of +0.1 V. The combination of very high transconductance (> 400 mS/mm) and low gate leakage allows unprecedented output current levels in excess of 1.2 A/mm. The small signal performance of these enhancement-mode devices shows a record current cutoff frequency (f_T) of 85 GHz and a power gain cutoff frequency (f_max) of 150 GHz.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; millimetre wave transistors; wide band gap semiconductors; 1 V; 150 GHz; 160 nm; 85 GHz; AlGaN-GaN; E-mode HEMT; enhancement-mode HEMT; enhancement-mode devices; fluorine-based surface treatment; gate recess; high electron-mobility transistors; millimeter-wave frequencies; Aluminum gallium nitride; Cutoff frequency; Gallium nitride; Gate leakage; HEMTs; Leakage current; MODFETs; Surface treatment; Threshold voltage; Transconductance; Enhancement mode (E-mode); GaN; high electron mobility transistor (HEMT); millimeter-wave frequencies;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.874761

Filename

1637547