Title :
Effects of laser irradiation of GaAs observed by d.l.t.s.
Author :
Emerson, Neil G. ; Sealy, B.J.
Author_Institution :
University of Surrey, Department of Electronic and Electrical Engineering, Guildford, UK
Abstract :
A Q-switched ruby laser has been used to heat-treat vapourphase-epitaxial (v.p.e.) GaAs. The characteristic A-centre, a deep trapping level at 0.83 eV, is removed using a laser pulse of energy density 0.3 J cm¿2. Trapping levels are observed using deep-level transient spectroscopy (d.l.t.s.).
Keywords :
III-V semiconductors; deep levels; gallium arsenide; laser beam effects; semiconductor epitaxial layers; 0.83 eV; A-centre; DLTS; GaAs; Q-switched ruby laser; VPE; deep level transient spectroscopy; deep trapping level; laser irradiation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790397
