Charge-transport characteristics in bistable resistive Poly(N-vinylcarbazole) films

Author

Lai, Yi-Sheng ; Tu, Chia-Hsun ; Kwong, Dim-Lee ; Chen, J.S.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

27

Issue

6

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

451

Lastpage

453

Abstract

Charge-transport characteristics of bistable resistive poly(N-vinylcarbazole) films as a function of temperature have been investigated. It is found that the on-state charge transport is dominated by ohmic conduction, hopping with an energy scale of the order of ∼ 20 meV. The off-state charge transport appears to follow a transition from ohmic to space charge limited conduction with a shallow-trap distribution. Nonetheless, the poly(N-vinylcarbazole) (PVK) film does not possess its memory characteristics when operated at temperatures higher than 410 K. The PVK film can be operated at low voltage (< 2 V) with a high on/off current ratio as large as 10⁶.

Keywords

charge exchange; polymer films; random-access storage; charge transport; ohmic conduction; poly(N-Vinylcarbazole) films; resistance random access memory; shallow-trap distribution; space charge limited conduction; Colossal magnetoresistance; Electric resistance; Electrodes; Magnetic materials; Microelectronics; Organic materials; Random access memory; Substrates; Temperature; Voltage; Charge transport; poly(N-vinylcarbazole) (PVK); resistance random access memory (RRAM);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.874762

Filename

1637554