Title :
HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicide
Author :
Wu, C.H. ; Hung, B.F. ; Chin, Albert ; Wang, S.J. ; Yen, F.Y. ; Hou, Y.T. ; Jin, Y. ; Tao, H.J. ; Chen, S.C. ; Liang, M.S.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
6/1/2006 12:00:00 AM
Abstract :
The authors have fabricated low-temperature fully silicided YbSi2-x-gated n-MOSFETs that used an HfAlON gate dielectric with a 1.7-nm EOT. After a 600 °C rapid thermal annealing, these devices displayed an effective work function of 4.1 eV and a peak electron mobility of 180 cm2/V·s. They have additional merit of a process compatible with current very large scale integration fabrication lines.
Keywords :
MOSFET; VLSI; cryogenic electronics; hafnium compounds; rapid thermal annealing; ytterbium compounds; 1.7 nm; 4.1 eV; 600 C; HfAlON; MOSFET; YbSi; electron mobility; rapid thermal annealing; very large scale integration fabrication; Atherosclerosis; CMOS technology; Dielectrics; Electron mobility; Hafnium oxide; MOSFET circuits; Rapid thermal annealing; Silicidation; Silicides; Ytterbium; HfAlON; MOSFET; YbSi;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.874778
