DocumentCode :
952676
Title :
Degradation-free MOS image sensor with photonic crystal color filter
Author :
Inaba, Yuichi ; Kasano, Masahiro ; Tanaka, Keisuke ; Yamaguchi, Takumi
Author_Institution :
Semicond. Devices Res. Center, Semicond. Co. Matsushita Electr. Ind. Co., Ltd, Kyoto, Japan
Volume :
27
Issue :
6
fYear :
2006
fDate :
6/1/2006 12:00:00 AM
Firstpage :
457
Lastpage :
459
Abstract :
This letter demonstrates a long-term reliable MOS image sensor equipped with a novel photonic crystal color filter (PC-CF). PCs are periodically structured dielectric media, generally possessing a photonic band gap. In the newly developed PC-CF, it is clarified that the desirable spectral property, i.e., peak wavelength and spectral passband, can be achieved by modifying the thicknesses of the defect layers, which act just like a "defect" in a PC. The spectral characteristics with the peak wavelengths at 450 (blue), at 530 (green), and at 610 nm (red) are realized in this letter. Moreover, the fabricated image sensor guarantees high reliability of longer than 200 000 h and heat resistance of above 300 °C.
Keywords :
MOS integrated circuits; image sensors; optical filters; photonic band gap; photonic crystals; 450 to 610 nm; MOS image sensor; dielectric media; photonic band gap; photonic crystal color filter; Band pass filters; Degradation; Dielectrics; Image sensors; Optical filters; Passband; Personal communication networks; Photonic band gap; Photonic crystals; Resistance heating; Color filter (CF); MOS image sensor; dielectric layer; photonic crystal (PC);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2006.874126
Filename :
1637556
Link To Document :
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