Title :
High-power-density 4H-SiC RF MOSFETs
Author :
Gudjónsson, G. ; Allerstam, F. ; ólafsson, H. ö ; Nilsson, P. Å ; Hjelmgren, H. ; Andersson, K. ; Sveinbjörnsson, E.O. ; Zirath, H. ; Rödle, T. ; Jos, R.
Author_Institution :
Dept. of Microtechnology & Nanoscience, Chalmers Univ. of Technol., Goteborg, Sweden
fDate :
6/1/2006 12:00:00 AM
Abstract :
The authors have made the first 4H-SiC RF power MOSFETs with cutoff frequency up to 12 GHz, delivering RF power of 1.9 W/mm at 3 GHz. The transistors withstand 200 V drain voltage, are normally off, and show no gate lag, which is often encountered in SiC MESFETs. The measured devices have a single drain finger and a double gate finger, and a total gate width of 0.8 mm. To their knowledge, this is the first time that power densities above 1 W/mm at 3 GHz are reported for SiC MOSFETs.
Keywords :
microwave field effect transistors; power MOSFET; 0.8 mm; 12 GHz; 200 V; 3 GHz; RF power MOSFET; SiC; double gate finger; gate lag; microwave application; single drain finger; Aluminum; Doping; Fingers; Lithography; MESFETs; MOSFETs; Nitrogen; Radio frequency; Silicon carbide; Voltage; MOSFET; Microwave application; silicon carbide;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.875725
