DocumentCode :
952724
Title :
Current-Voltage Relations for Thin-Film Tunneling Structures
Author :
Scales, John L., III
Author_Institution :
Harry Diamond Lab., Washington D.C.
Volume :
11
Issue :
1
fYear :
1964
fDate :
3/1/1964 12:00:00 AM
Firstpage :
9
Lastpage :
15
Abstract :
Current-voltage characteristics have been calculated for a structure consisting of two metal surfaces separated by a thin film of "insulating" material. The analysis includes both tunneling and thermionic emission, and takes account of dielectric constant and image force. Curves of current density vs field strength are presented for various values of barrier height and dielectric constant. Several comparisons of theory with experiment are given, and it is concluded that the theory overemphasizes the thermionic contribution.
Keywords :
Current-voltage characteristics; Dielectric constant; Dielectric materials; Dielectric thin films; Dielectrics and electrical insulation; Image analysis; Inorganic materials; Thermionic emission; Transistors; Tunneling;
fLanguage :
English
Journal_Title :
Component Parts, IEEE Transactions on
Publisher :
ieee
ISSN :
0097-6601
Type :
jour
DOI :
10.1109/TCP.1964.1134968
Filename :
1134968
Link To Document :
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