Title :
Ion-implanted GaAs X-band power f.e.t.s
Author :
Doerbeck, F.H. ; Macksey, H.M. ; Brehm, G.E. ; Frensley, W.R.
Author_Institution :
Texas Instruments Incorporated, Central Research Laboratories, Dallas, USA
Abstract :
Active layers for GaAs power f.e.t.s have been produced by Si implantation into Cr-doped substrates followed by a simple proximity-annealing technique. Devices fabricated on these layers have up to 1.05 W/mm gate width at 10 GHz. This performance is equal to that of epitaxial devices.
Keywords :
field effect transistors; power transistors; solid-state microwave devices; 10 GHz; GaAs; X-band; ion implantation; microwave devices; performance; power FET; proximity annealing technique;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790414
