Title :
Microwave gain from an n-channel enhancement-mode InP m.i.s.f.e.t.
Author :
Meiners, L.G. ; Lile, D.L. ; Collins, D.A.
Author_Institution :
Naval Ocean Systems Center, Electronic Material Sciences Division, San Diego, USA
Abstract :
A power gain of 14 dB at 1 GHz has been demonstrated in an enhancement-mode m.i.s.f.e.t. constructed on an Fe-doped semi-insulating InP substrate. The same device also exhibits well behaved gain characteristics at low frequencies.
Keywords :
insulated gate field effect transistors; solid-state microwave devices; 1 GHz; 14 dB power gain; gain characteristics; low frequencies; microwave gain; n-channel enhancement mode MISFET;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790415
