Title :
Impact of metal work function on memory properties of charge-trap flash memory devices using fowler-nordheim P/E mode
Author :
Jeon, Sanghun ; Han, Jeong Hee ; Lee, Junghoon ; Choi, Sangmoo ; Hwang, Hyunsang ; Kim, Chungwoo
Author_Institution :
Samsung Adv. Inst. of Technol., Gyunggi-Do, South Korea
fDate :
6/1/2006 12:00:00 AM
Abstract :
This letter reports the impact of metal work function (ΦM) on memory properties of charge-trap-Flash memory devices using Fowler-Nordheim program/erase mode. For eliminating electron back tunneling and hole back tunneling through the blocking oxide during an program/erase operation, a gate with ΦM of 5.1-5.7 eV on an Al2O3-SiN-SiO2 (ANO) stack is necessary. Compared to a thickness optimized n+ poly-Si/ONO stack, a high-work-function gate on an ANO stack shows dramatic improvements in retention versus minimum erase state.
Keywords :
alumina; electron traps; flash memories; silicon compounds; tunnelling; work function; 5.1 to 5.7 eV; Al2O3-SiN-SiO2; Fowler-Nordheim program/erase mode; charge-trap; electron back tunneling; flash memory devices; hole back tunneling; memory properties; metal work function; Charge carrier processes; Dielectrics; Electron traps; Flash memory; Gold; Heterojunction bipolar transistors; Laboratories; Materials science and technology; Research and development; Tunneling; Charge trap; electron back tunneling (EBT); hole back tunneling (HBT); work function;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.874216
