Ultrafast floating 75-V lateral IGBT with a buried hole diverter and an effective junction isolation

Author

Bakeroot, B. ; Doutreloigne, J. ; Moens, P.

Author_Institution

Ghent Univ., Belgium

Volume

27

Issue

6

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

492

Lastpage

494

Abstract

A low-voltage lateral insulated gate bipolar transistor (IGBT) is proposed for junction-isolated smart power technologies. An effective suppression of the substrate current is obtained through the use of a double buried layer structure. This structure, with the buried layer of p-type (BLP) on top of the buried layer of n-type, also ensures fast switching and a wide safe operating area as the BLP serves as a buried hole diverter in the on state and during turnoff. The floating capability of the device is also provided by the double buried layer. This lateral IGBT (LIGBT) is made in a standard smart power technology without adding extra masks. Due to the low power losses in the on state and during switching, this n-type LIGBT is competitive with n-type DMOS devices.

Keywords

divertors; insulated gate bipolar transistors; isolation technology; power semiconductor devices; switching transients; 75 V; buried hole diverter; effective junction isolation; effective suppression; insulated gate bipolar transistor; junction-isolated technology; lateral IGBT; n-type DMOS devices; n-type LIGBT; p-type BLP; power semiconductor devices; standard smart power technology; substrate current; switching transient; ultrafast floating; Bipolar transistors; CMOS technology; Cathodes; Crosstalk; Insulated gate bipolar transistors; Isolation technology; Power semiconductor devices; Power semiconductor switches; Silicon on insulator technology; Substrates; Insulated gate bipolar transistor (IGBT); junction-isolated technology; power semiconductor devices; switching transient;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.875146

Filename

1637567