Title :
A power amplifier based on an extended resonance technique
Author :
Martin, Adam ; Mortazawi, Amir ; Loach, Bernard C De, Jr.
Author_Institution :
Dept. of Electr. Eng., Central Florida Univ., Orlando, FL, USA
fDate :
10/1/1995 12:00:00 AM
Abstract :
A new power amplifier based on an extended resonance technique is presented. This technique produces high power through multiplying the power handling capability of a single device by the number of devices employed while maintaining the gain of a single-device amplifier. An X-band power combining amplifier employing four 100 mW MESFET´s was designed and constructed. The small signal gain was measured at 11.5 dB, and a maximum of 480 mW was obtained at 9.57 GHz with a power-added efficiency of 30.8%
Keywords :
MESFET circuits; circuit resonance; microwave power amplifiers; power amplifiers; power combiners; resonance; 11.5 dB; 30.8 percent; 480 mW; 9.57 GHz; MESFETs; X-band; extended resonance; power amplifier; power combining amplifier; power-added efficiency; small signal gain; Admittance; Circuits; High power amplifiers; MESFETs; Oscillators; Power amplifiers; Power transmission lines; Resonance; Shunt (electrical); Transmission line theory;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
