Title :
Anomalous BTI effects in n-type integrated power transistors
Author :
Moens, P. ; Cano, J.F. ; Desoete, B.
Author_Institution :
AMI Semicond. Belgium BVBA, Oudenaarde, Belgium
fDate :
6/1/2006 12:00:00 AM
Abstract :
A novel bias-temperature-instability effect is observed in n-type integrated power transistors. The effect is enhanced by the total internal temperature of the device as well as by the oxide electric field. The total temperature that the device is experiencing is the sum of the ambient temperature and the temperature increase due to power dissipation. The latter is found to be the dominant effect in power transistors integrated in deep submicrometer technologies. A model is presented to calculate the safe operating area of the transistors.
Keywords :
power MOSFET; semiconductor device models; semiconductor device testing; BTI effect; bias-temperature-instability effect; deep submicrometer technology; n-type integrated power transistor; oxide electric field; power dissipation; total internal temperature; Automotive applications; Degradation; Hot carriers; MOS devices; Power dissipation; Power generation; Power transistors; Stress; Switches; Temperature; Bias temperature instability (BTI); integrated power; threshold-voltage shift; vertical diffusion metal-oxide semiconductor (VDMOS);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.875723
