Title :
n-channel formation on semi-insulating InP surface by m.i.s.f.e.t.
Author :
Kawakami, Tsuyoshi ; Okamura, Masamichi
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
InP m.i.s.f.e.t.s using Fe-doped semi-insulating material surface have been fabricated. The devices, composed of sulphur-diffused n-type source and drain and c.v.d. Al2O3 gate insulator, exhibited n-channel normally-off behaviour and a source drain capacitance two orders of magnitude smaller than that of p-InP m.i.s.f.e.t.s with the same dimensions.
Keywords :
III-V semiconductors; indium compounds; insulated gate field effect transistors; Al2O3 gate insulator; InP/Al2O3 MISFETs; N-channel formation; low source drain capacitance; semi-insulating InP surface;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790531
