Title :
Evidence of trapping in device-quality liquid-phase-epitaxial In1¿xGaxAsyP1¿y
Author :
Bhattacharya, P.K. ; Ku, J.W. ; Owen, S.J.T. ; Chiao, S.H. ; Yeats, R.
Author_Institution :
Oregon State University, Department of Electrical and Computer Engineering, Corvallis, USA
Abstract :
Traps have been identified in epitaxial n- and p-type In1¿xGaxAsyP1¿y for the first time. The activation energy, capture cross-section and density of several electron traps in the quaternary composition range from InP to In0.53Ga0.47As have been determined. An electron trap similar in some characteristics to the 0.83 eV electron trap present dominantly in bulk and v.p.e. GaAs was observed in an n-type In0.71Ga0.29As0.45P0.55(Eg=0.95 eV) layer. Hole traps were not observed.
Keywords :
III-V semiconductors; electron traps; gallium compounds; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; III-V semiconductors; In1-xGaxAsyP1-y; LPE layers; activation energy; capture cross sections; device quality semiconductor material; electron traps density; n-type semiconductors; p-type semiconductors; semiconductor epitaxial layers; trapping;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790538
