• DocumentCode
    952959
  • Title

    Incorporation of bromine into Si-SiO2 interfaces and effects on interface state distribution

  • Author

    Poon, T.C. ; Card, H.C.

  • Author_Institution
    Columbia University, Columbia Radiation Laboratory, Department of Electrical Engineering. School of Engineering and Applied Science, New York, USA
  • Volume
    15
  • Issue
    23
  • fYear
    1979
  • Firstpage
    756
  • Lastpage
    757
  • Abstract
    An experimental study has been made of the effects of bromine treatment of (111) silicon surfaces before thermal oxidation. A sharp peak in the Si-SiO2 interface state distribution at Ev+ 0.15 eV and an overall increase in density by as much as two orders of magnitude has been observed in m.o.s. structures with SiO2 thickness of ¿ 100 Å. In a.c. conductance against bias voltage measurements, two conductance peaks are observed rather than the customary single peak.
  • Keywords
    bromine; elemental semiconductors; interface electron states; semiconductor-insulator boundaries; silicon; silicon compounds; AC conductance measurement; Br incorporation effects; Si-SiO2 interfaces; interface state distributions; thermal oxidation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790540
  • Filename
    4243607
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=952959