• DocumentCode
    953061
  • Title

    alpha factor improvements in high-speed p doped In0.35Ga 0.65As/GaAs MQW lasers

  • Author

    Schofelder, A. ; Weisser, Stefan ; Ralston, J.D. ; Rosenzweig, J.

  • Author_Institution
    Fraunhofer Inst. fur Angewandte Festkorperphysik, Freiburg, Germany
  • Volume
    29
  • Issue
    19
  • fYear
    1993
  • Firstpage
    1685
  • Lastpage
    1686
  • Abstract
    The authors investigate experimentally for the first time the improvements in the linewidth enhancement factor, alpha , resulting from simultaneous addition of strain and p-doping in high-speed GaAs-based multiquantum well lasers. The alpha factor is determined from measured changes in both gain and refractive index as a function of CW bias current, yielding alpha 3.1 and 1.4 at the threshold lasing wavelength for unstrained GaAs/Al0.25Ga0.75As and p-doped strained In0.35Ga0.65As/GaAs devices, respectively.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; refractive index; semiconductor lasers; spectral line breadth; CW bias current; GaAs-Al 0.25Ga 0.75As; In 0.35Ga 0.65As-GaAs; MQW lasers; alpha factor; alpha factor improvements; gain; high-speed p doped In 0.35Ga 0.65As/GaAs; linewidth enhancement factor; multiquantum well lasers; p-doping; refractive index; strain; threshold lasing wavelength;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19931121
  • Filename
    237349
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=953061