• DocumentCode
    953116
  • Title

    7.4 Gbit monolithically integrated GaAs/AlGaAs laser diode-laser driver structure

  • Author

    Hornung, J. ; Wang, Z.G. ; Bronner, W. ; Kohler, Klaus ; Ganser, P. ; Raynor, B. ; Benz, W. ; Ludwig, Michael

  • Author_Institution
    Fraunhofer Inst. fur Angewandte Festkorperphysik, Freiburg, Germany
  • Volume
    29
  • Issue
    19
  • fYear
    1993
  • Firstpage
    1694
  • Lastpage
    1696
  • Abstract
    A molecular beam epitaxy (MBE) grown GaAs/AlGaAs multiquantum well laser, monolithically integrated with a laser driver was realised on 2 inch GaAs substrate wafers. In an optical data communication set up, performance up to data rates of 7.4 Gbit/s was demonstrated.
  • Keywords
    III-V semiconductors; aluminium compounds; data communication equipment; digital communication systems; gallium arsenide; integrated optoelectronics; molecular beam epitaxial growth; optical communication equipment; semiconductor lasers; 7.4 Gbit/s; GaAs substrate wafers; GaAs-AlGaAs; MBE growth; MQW laser; data rates; molecular beam epitaxy; monolithically integrated; optical data communication;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19931127
  • Filename
    237355
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=953116