Trap localisation in the active layer of GaAs microwave f.e.t.s

The localisation of traps in the active layer of GaAs microwave m.e.s.f.e.t.s has been effected for two different epitaxial materials. The method used in this work was a transient measurement of source-drain voltage associated with a simple theoretical model. Our results indicate that electron traps are localised in the bulk of the epilayer whereas hole traps are localised at the epilayer/buffer-layer interface.