Title :
Vaporisation of GaAs during laser annealing
Author :
Badawi, M.H. ; Sealy, B.J. ; Stephens, K.G.
Author_Institution :
University of Surrey, Department of Electronic & Electrical Engineering, Guildford, UK
Abstract :
It is found that when uncoated GaAs samples are irradiated with a Q-switched ruby laser, the samples suffer substantial weight losses for laser cnergy densities > 0·3 J/cm2. These weight losses are believed to result from the vaporization of the samples during the period in which the surfaces are in a molten state. The incomplete electrical activation of implanted ions in GaAs after laser annealing can be accounted for by the weight-loss phenomenon.
Keywords :
III-V semiconductors; annealing; gallium arsenide; laser beam effects; vaporisation; GaAs; Q switched ruby laser; electrical activation; implanted ions; laser annealing; laser irradiation; vaporisation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790559
