Sacrificial wafer bonding for planarization after very deep etching

Author

Spiering, V.L. ; Berenschot, J.W. ; Elwenspoek, Miko ; Fluitman, Jan H J

Author_Institution

MESA Res. Inst., Twente Univ., Enschede, Netherlands

Volume

4

Issue

3

fYear

1995

fDate

9/1/1995 12:00:00 AM

Firstpage

151

Lastpage

157

Abstract

A new technique is presented that provides planarization after a very deep etching step in silicon. This offers the possibility for resist spinning and layer patterning as well as realization of bridges or cantilevers across deep holes or grooves. The sacrificial wafer bonding technique contains a wafer bond step followed by an etch back. Results of polymer bonding followed by dry etching and anodic bonding combined with KOH etching are discussed. The polymer bonding has been applied in a strain based membrane pressure sensor to pattern the strain gauges and to provide electrical connections across a deep corrugation in a thin silicon nitride membrane by metal bridges

Keywords

elemental semiconductors; micromechanical devices; microsensors; photoresists; pressure sensors; silicon; sputter etching; wafer bonding; KOH; Si; anodic bonding; cantilevers; deep corrugation; dry etching; etch back; layer patterning; planarization; polymer bonding; resist spinning; sacrificial wafer bonding; strain based membrane pressure sensor; very deep etching; Biomembranes; Bridges; Capacitive sensors; Dry etching; Planarization; Polymers; Resists; Silicon; Spinning; Wafer bonding;

fLanguage

English

Journal_Title

Microelectromechanical Systems, Journal of

Publisher

ieee

ISSN

1057-7157

Type

jour

DOI

10.1109/84.465120

Filename

465120