• DocumentCode
    953435
  • Title

    Channelled-substrate narrow-stripe GaAs/GaAlAs injection lasers with extremely low threshold currents

  • Author

    Kirkby, P.A.

  • Author_Institution
    Standard Telecommunication Laboratories Ltd., Harlow, UK
  • Volume
    15
  • Issue
    25
  • fYear
    1979
  • Firstpage
    824
  • Lastpage
    826
  • Abstract
    Channelled-substrate GaAs/GaAlAs injection lasers with very narrow current-confining stripe contacts are described. They have threshold currents less than half those previously reported for this type of device. The best devices had a room-temperature threshold current of only 12 mA pulsed and 14 mA c.w. The lasers also have very good high-temperature performance and c.w. operation has been obtained up to 160°C.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; GaAs-GaAlAs; channelled substrate; low threshold currents; narrow current confining stripe contacts; semiconductor function lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790586
  • Filename
    4243769
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=953435