Properties of Zirconium Nitride Film Resistors Deposited by Reactive RF Sputtering

Zirconium nitridefilms were prepared by reactive RF sputtering in argon-nitrogen mixtures, and various electrical properties of these films were investigated. The resistivities of zirconium nitride films varied from 5 X 10²to 2 X 10⁴µohm-cm, depending on sputtering pressure. In the resistivity range from 5 X 10²to 1.3 X 10³µ;ohm-cm, the films , display a reasonably small temperature coefficient of resistance (zero to -200 ppm/°C). After thermal aging, the zirconium nitride film resistors exhibit high stability.