Title :
Use of trimethylantimony and trimethylarsenic for organometallic v.p.e. growth of GAAs1-ySby and Ga1-xInxAs
Author :
Cooper, C.B. ; Ludowise, M.J. ; Aebi, Verle ; Moon, R.L.
Author_Institution :
Varian Associates Inc., Corporate Solid State Laboratory, Palo Alto, USA
Abstract :
The use of trimethylarsenic and trimethylantimony as group V sources for the organometallic v.p.e. growth of GaAs1-ySby (0 ¿ y ¿ 0.11) and Ga1-xInxAs(x ¿ 0.29) is reported. No room-temperature reaction is observed between triethylindium and trimethylarsenic and the growths are made at ambient pressure with no special reactor modifications.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; semiconductor technology; vapour phase epitaxial growth; Ga1-xInxAs; GaAs1-ySby; III-V semiconductors; group V sources; organometallic VPE; semiconductor technology; trimethyl As; trimethyl Sb;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800017
