• DocumentCode
    953599
  • Title

    Use of trimethylantimony and trimethylarsenic for organometallic v.p.e. growth of GAAs1-ySby and Ga1-xInxAs

  • Author

    Cooper, C.B. ; Ludowise, M.J. ; Aebi, Verle ; Moon, R.L.

  • Author_Institution
    Varian Associates Inc., Corporate Solid State Laboratory, Palo Alto, USA
  • Volume
    16
  • Issue
    1
  • fYear
    1980
  • Firstpage
    20
  • Lastpage
    21
  • Abstract
    The use of trimethylarsenic and trimethylantimony as group V sources for the organometallic v.p.e. growth of GaAs1-ySby (0 ¿ y ¿ 0.11) and Ga1-xInxAs(x ¿ 0.29) is reported. No room-temperature reaction is observed between triethylindium and trimethylarsenic and the growths are made at ambient pressure with no special reactor modifications.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; semiconductor technology; vapour phase epitaxial growth; Ga1-xInxAs; GaAs1-ySby; III-V semiconductors; group V sources; organometallic VPE; semiconductor technology; trimethyl As; trimethyl Sb;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800017
  • Filename
    4243797
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=953599