Title :
110-120-GHz monolithic low-noise amplifiers
Author :
Wang, Huei ; Ton, Thuy-Nhung ; Tan, Kin L. ; Garske, Diane C. ; Dow, Gee Samuel ; Berenz, John ; Pospieszalski, Marian W. ; Pan, Shing-Kuo
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
fDate :
10/1/1993 12:00:00 AM
Abstract :
The authors discuss the development of 110-120-GHz monolithic low-noise amplifiers (LNAs) using 0.1-mm pseudomorphic AlGaAs/InGaAs/GaAs low-noise HEMT technology. Two 2-stage LNAs have been designed, fabricated, and tested. The first amplifier demonstrates a gain of 12 dB at 112 to 115 GHz with a noise figure of 6.3 dB when biased for high gain, and a noise figure of 5.5 dB is achieved with an associated gain of 10 dB at 113 GHz when biased for low-noise figure. The other amplifier has a measured small-signal gain of 19.6 dB at 110 GHz with a noise figure of 3.9 dB. A noise figure of 3.4 dB with 15.6-dB associated gain was obtained at 113 GHz. The authors state that the small-signal gain and noise figure performance for the second LNA are the best results ever achieved for a two-stage HEMT amplifier at this frequency band
Keywords :
MMIC; field effect integrated circuits; high electron mobility transistors; microwave amplifiers; 0.1 micron; 10 to 19.6 dB; 110 to 120 GHz; 2-stage LNAs; 3.4 to 6.3 dB; AlGaAs-InGaAs-GaAs; EHF; MIMIC; MM-wave IC; MMIC; low-noise HEMT technology; low-noise amplifiers; monolithic LNA; pseudomorphic HEMT; Frequency; Gain measurement; Gallium arsenide; HEMTs; Indium gallium arsenide; Low-noise amplifiers; Noise figure; Noise measurement; Performance gain; Testing;
Journal_Title :
Solid-State Circuits, IEEE Journal of
