A highly integrated wideband millimeter-wave MMIC converter using 0.25-μm P-HEMT technology

Author

Fudem, Howard ; Moghe, Sanjay ; Dietz, Greg

Author_Institution

Northrop Electron. Syst. Div., Rolling Meadows, IL, USA

Volume

28

Issue

10

fYear

1993

fDate

10/1/1993 12:00:00 AM

Firstpage

1001

Lastpage

1004

Abstract

A highly integrated wideband converter that was designed to upconvert the entire 6- to 18-GHz input RF frequency band to a 22-GHz intermediate frequency using a 28- to 40-GHz local oscillator (LO) is described. The circuit was designed using 0.25-μm pseudomorphic HEMT technology. The converter incorporates a three-stage RF amplifier, a three-stage LO amplifier, and an active balanced mixer, all integrated on a chip 96 mil×96 mil in size. The upconverter monolithic microwave integrated circuit (MMIC) has an average of 10-dB conversion gain across the full 6-18-GHz input band

Keywords

MMIC; field effect integrated circuits; frequency convertors; high electron mobility transistors; 0.25 micron; 10 dB; 22 GHz; 28 to 40 GHz; 6 to 18 GHz; MIMIC; P-HEMT technology; SHF; integrated wideband converter; millimeter-wave MMIC; pseudomorphic HEMT technology; upconvertor; Frequency conversion; Integrated circuit technology; Local oscillators; MMICs; Millimeter wave integrated circuits; Millimeter wave technology; PHEMTs; Radio frequency; Radiofrequency amplifiers; Wideband;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.237513

Filename

237513