Integrated complementary HBT microwave push-pull and Darlington amplifiers with p-n-p active loads

Author

Kobayashi, Kevin W. ; Umemoto, Donald K. ; Velebir, James R. ; Oki, Aaron K. ; Streit, Dwight C.

Author_Institution

TRW Inc., Redondo Beach, CA, USA

Volume

28

Issue

10

fYear

1993

fDate

10/1/1993 12:00:00 AM

Firstpage

1011

Lastpage

1017

Abstract

The authors report the microwave results of complementary heterojunction bipolar transistor (HBT) amplifiers that integrate both n-p-n and p-n-p devices on the same chip using selective molecular beam epitaxy (MBE). An HBT wideband amplifier utilizing the Darlington configuration and implementing a p-n-p active load has a gain of 7.5 dB and a bandwidth from DC to 2.5 GHz. A complementary push-pull amplifier has a saturated output power of 7.5 dBm at 2.5 GHz

Keywords

MMIC; bipolar integrated circuits; heterojunction bipolar transistors; microwave amplifiers; molecular beam epitaxial growth; wideband amplifiers; 0 to 2.5 GHz; 7.5 dB; Darlington configuration; MBE; complementary HBT; heterojunction bipolar transistor; p-n-p active loads; push-pull amplifier; selective molecular beam epitaxy; wideband amplifier; Broadband amplifiers; Doping; Gallium arsenide; Heterojunction bipolar transistors; Microwave amplifiers; Molecular beam epitaxial growth; Operational amplifiers; Optical amplifiers; Power amplifiers; Silicon;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.237515

Filename

237515