Title :
Integrated complementary HBT microwave push-pull and Darlington amplifiers with p-n-p active loads
Author :
Kobayashi, Kevin W. ; Umemoto, Donald K. ; Velebir, James R. ; Oki, Aaron K. ; Streit, Dwight C.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
fDate :
10/1/1993 12:00:00 AM
Abstract :
The authors report the microwave results of complementary heterojunction bipolar transistor (HBT) amplifiers that integrate both n-p-n and p-n-p devices on the same chip using selective molecular beam epitaxy (MBE). An HBT wideband amplifier utilizing the Darlington configuration and implementing a p-n-p active load has a gain of 7.5 dB and a bandwidth from DC to 2.5 GHz. A complementary push-pull amplifier has a saturated output power of 7.5 dBm at 2.5 GHz
Keywords :
MMIC; bipolar integrated circuits; heterojunction bipolar transistors; microwave amplifiers; molecular beam epitaxial growth; wideband amplifiers; 0 to 2.5 GHz; 7.5 dB; Darlington configuration; MBE; complementary HBT; heterojunction bipolar transistor; p-n-p active loads; push-pull amplifier; selective molecular beam epitaxy; wideband amplifier; Broadband amplifiers; Doping; Gallium arsenide; Heterojunction bipolar transistors; Microwave amplifiers; Molecular beam epitaxial growth; Operational amplifiers; Optical amplifiers; Power amplifiers; Silicon;
Journal_Title :
Solid-State Circuits, IEEE Journal of
