DocumentCode :
953671
Title :
Revised stability analysis of the nonlinear Poisson scheme in self-consistent Monte Carlo device simulations
Author :
Palestri, Pierpaolo ; Barin, Nicola ; Esseni, David ; Fiegna, Claudio
Author_Institution :
Udine Univ., Italy
Volume :
53
Issue :
6
fYear :
2006
fDate :
6/1/2006 12:00:00 AM
Firstpage :
1443
Lastpage :
1451
Abstract :
In this paper, the stability of self-consistent Monte Carlo (MC) device simulations is revised by developing a model that extends the existing ones by accounting for the effect of a carrier diffusion. Both the linear and the nonlinear Poisson schemes have been considered. The analysis of the linear Poisson scheme reveals that, consistently with the available model, the time step between two Poisson solutions must be short compared to a factor proportional to the scattering rate. On the other hand, it has been found that, contrary to the available stability models, the nonlinear Poisson scheme requires long time steps in order to provide stable simulations. For this reason, the nonlinear scheme is advantageous when considering steady-state simulations. The model predictions have been verified by comparison with MC simulations implementing both schemes.
Keywords :
Monte Carlo methods; Poisson equation; carrier lifetime; semiconductor device models; stability; Monte Carlo device simulations; carrier diffusion; linear Poisson scheme; nonlinear Poisson scheme; stability analysis; steady-state simulations; Analytical models; Boltzmann equation; Electron devices; Electrostatics; Monte Carlo methods; Poisson equations; Predictive models; Scattering; Stability analysis; Steady-state; Device simulations; Monte Carlo (MC) methods; stability analysis;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2006.874757
Filename :
1637642
Link To Document :
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