• DocumentCode
    953671
  • Title

    Revised stability analysis of the nonlinear Poisson scheme in self-consistent Monte Carlo device simulations

  • Author

    Palestri, Pierpaolo ; Barin, Nicola ; Esseni, David ; Fiegna, Claudio

  • Author_Institution
    Udine Univ., Italy
  • Volume
    53
  • Issue
    6
  • fYear
    2006
  • fDate
    6/1/2006 12:00:00 AM
  • Firstpage
    1443
  • Lastpage
    1451
  • Abstract
    In this paper, the stability of self-consistent Monte Carlo (MC) device simulations is revised by developing a model that extends the existing ones by accounting for the effect of a carrier diffusion. Both the linear and the nonlinear Poisson schemes have been considered. The analysis of the linear Poisson scheme reveals that, consistently with the available model, the time step between two Poisson solutions must be short compared to a factor proportional to the scattering rate. On the other hand, it has been found that, contrary to the available stability models, the nonlinear Poisson scheme requires long time steps in order to provide stable simulations. For this reason, the nonlinear scheme is advantageous when considering steady-state simulations. The model predictions have been verified by comparison with MC simulations implementing both schemes.
  • Keywords
    Monte Carlo methods; Poisson equation; carrier lifetime; semiconductor device models; stability; Monte Carlo device simulations; carrier diffusion; linear Poisson scheme; nonlinear Poisson scheme; stability analysis; steady-state simulations; Analytical models; Boltzmann equation; Electron devices; Electrostatics; Monte Carlo methods; Poisson equations; Predictive models; Scattering; Stability analysis; Steady-state; Device simulations; Monte Carlo (MC) methods; stability analysis;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2006.874757
  • Filename
    1637642