DocumentCode :
953695
Title :
Gallium-arsenide process evaluation based on a RISC microprocessor example
Author :
Brown, Richard B. ; Upton, Michael ; Chandna, Ajay ; Huff, Thomas R. ; Mudge, Trevor N. ; Oettel, Richard E.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume :
28
Issue :
10
fYear :
1993
fDate :
10/1/1993 12:00:00 AM
Firstpage :
1030
Lastpage :
1037
Abstract :
The authors evaluate the features of a gallium-arsenide E/D MESFET process in which a 32-b RISC microprocessor was implemented. The design methodology and architecture of this prototype CPU are described. The performance sensitivities of the microprocessor and other large circuit blocks to different process parameters are analyzed, and recommendations for future process features, circuit approaches, and layout styles are made. These recommendations are reflected in the design of a second microprocessor using a more advanced process that achieves much higher density and performance
Keywords :
III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; integrated circuit technology; microprocessor chips; reduced instruction set computing; 32 bit; E/D MESFET process; GaAs; RISC microprocessor; architecture; design methodology; layout styles; performance sensitivities; process parameters; prototype CPU; Circuits; Design methodology; Gallium arsenide; Hardware design languages; MESFETs; Microprocessors; Performance analysis; Prototypes; Reduced instruction set computing; Very large scale integration;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.237518
Filename :
237518
Link To Document :
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