Title :
Enhancement-mode AlGaN/GaN HEMTs on silicon substrate
Author :
Jia, Shuo ; Cai, Yong ; Wang, Deliang ; Zhang, Baoshun ; Lau, Kei May ; Chen, Kevin J.
Author_Institution :
Dept. of Electr. & Electron. Eng, Hong Kong Univ. of Sci. & Technol., China
fDate :
6/1/2006 12:00:00 AM
Abstract :
High-performance enhancement-mode AlGaN/GaN HEMTs (E-HEMTs) were demonstrated with samples grown on a low-cost silicon substrate for the first time. The fabrication process is based on a fluoride-based plasma treatment of the gate region and postgate annealing at 450 °C. The fabricated E-HEMTs have nearly the same peak transconductance (Gm) and cutoff frequencies as the conventional depletion-mode HEMTs fabricated on the same wafer, suggesting little mobility degradation caused by the plasma treatment.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; plasma materials processing; semiconductor device manufacture; silicon; wide band gap semiconductors; HEMT; Si-AlGaN-GaN; cutoff frequency; enhancement-mode; fluoride-based plasma treatment; mobility degradation; postgate annealing; threshold voltage; transconductance; Aluminum gallium nitride; Annealing; Cutoff frequency; Fabrication; Gallium nitride; HEMTs; MODFETs; Plasmas; Silicon; Transconductance; AlGaN/GaN; HEMT; enhancement mode; fluoride; plasma treatment; silicon substrate; threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.873881
