Title :
Laser-formed metallic connections employing a lateral link structure
Author :
Bernstein, Joseph B. ; Colella, Barry D.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
fDate :
9/1/1995 12:00:00 AM
Abstract :
Laser-programmed connections between metal lines on the same level of metallization have been developed as a means to achieve high density linking for customization in programmable gate arrays and for additive redundancy in restructurable integrated circuits. This work reports on the linking of aluminum based metal interconnect using a Q-switched diode pumped solid state laser where perfect yield was achieved. The links were formed by focusing the laser between two adjacent lines of metal, one of which was connected to a lower level of metal through a contact via. The resistance of the connections was approximately 3.0 Ω, including two vias and a connecting length of lower level metal
Keywords :
PLD programming; integrated circuit metallisation; integrated circuit yield; laser beam applications; programmable logic arrays; redundancy; 3.0 ohm; additive redundancy; connecting length; contact via; high density linking; laser-formed metallic connections; laser-programmed connections; lateral link structure; metal lines; metallization; perfect yield; programmable gate arrays; restructurable integrated circuits; solid state laser; Aluminum; Diodes; Integrated circuit interconnections; Integrated circuit metallization; Integrated circuit yield; Joining processes; Laser excitation; Optical arrays; Semiconductor laser arrays; Solid lasers;
Journal_Title :
Components, Packaging, and Manufacturing Technology, Part A, IEEE Transactions on
