953797

Erratum: Measurement arrangement for direct capacitance/surface-potential recording on m.o.s. capacitor

Ligtenberg, H.C.G. ; Snijder, J.

16

1

1980

45

capacitance measurement; metal-insulator-semiconductor structures; MOS capacitor; direct capacitance/surface potential recording; measurement arrangement; slow ramp C/V method;

English

Electronics Letters

iet

0013-5194

jour

10.1049/el:19800035

4243819